CHA3666-SNF
5.8-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in hermetic package
Description
The CHA3666-SNF is a two-stage self-
biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in lead-free, hermetic package
compatible for space application.
Gain & NF @ Vd=4V
Main Features
■
Broadband performance 5.8-16GHz
■
2.8dB maximum noise figure
■
24dBm 3
rd
order intercept point
■
16dBm power at 1dB compression
■
20dB gain
■
Low DC power consumption
■
12L-Glass/metal hermetic package
24
22
20
18
16
14
12
10
8
6
4
2
0
4
6
8
10
Frequency (GHz)
Gain & NF (dB)
Gain
NF
12
14
16
Main Characteristics
Tamb = +25° Vd = +4V, Id=80mA
C,
Symbol
NF
G
IP3
Parameter
Noise figure
Smal signal Gain
3rd order intercept point
16
Min
Typ
2.1
20
24
Max
2.8
Unit
dB
dB
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3666-SNF7208 - 27 Jul 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
