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CHA3666-FAA_15 参数 Datasheet PDF下载

CHA3666-FAA_15图片预览
型号: CHA3666-FAA_15
PDF下载: 下载PDF文件 查看货源
内容描述: [6-16GHz Low Noise Amplifier]
分类和应用:
文件页数/大小: 12 页 / 537 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA3666-FAA  
6-16GHz Low Noise Amplifier  
DC Schematic  
This chip is self-biased, and flexibility is provided by the access to number of leads.  
The internal DC electrical schematic is given in order to use these leads in a safe way.  
Vd1  
Vd2  
1.5K  
3.1K  
0.3K  
40  
2.5  
0.3K  
RFout  
RFin  
20  
20  
90  
90  
8
P1  
P2  
N2  
Two standard biasing:  
Low Noise and low consumption:  
Vd1=Vd2 = 4V and P1, N2 grounded.  
P2 pads non connected (NC).  
Idd = 80mA & Pout-1dB = 16dBm Typical.  
Low Noise and higher output power:  
Vd1=Vd2 = 4V and P1, P2 grounded.  
N2 pads non connected (NC).  
Idd = 85mA & Pout-1dB = 16.5dBm Typical.  
Ref. : DSCHA3666-FAA2356 - 21 Dec 12  
10/12  
Specifications subject to change without notice  
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France  
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34