CHA3514
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°
C
Vd = Pads B, D = 4.5V, Vg = Pads A, E tuned for Id = 190mA
Symbol
Fop
G
ATT bit
Parameter
Operating frequency range (1)
Small signal gain @ Attenuator state 0dB (1)
Attenuator bit: State 2.5dB
State 5dB
State 10 dB
State 20dB
Min
6
11
2
4
9
19
35
Typ
Max
18
Unit
GHz
dB
13
2.6
5
10
22
39.5
18
3.5
6
11
23
dB
dB
dB
dB
dB
dBm
ATT dyn
P1dB
Attenuator dynamic range with 4bit
Output power at 1dB compression @ Attenuator
state 0dB (1)
Saturated Output power @ Attenuator state 0dB
(1)
Noise figure @ Attenuator state 0dB
Input Return Loss all attenuator states
Output Return Loss all attenuator states
Drain bias DC voltage (
Pads B,D)
Bias current @ small signal
Control voltage for Attenuator bits
Psat
19
dBm
NF
RL_IN
RL_OUT
Vd
Id
Vc
7
-13
-15
4.5
190
-5
250
0
-8
-9
dB
dB
dB
V
mA
V
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. : DSCHA3514-8144 - 23 May 08
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
