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CHA3514 参数 Datasheet PDF下载

CHA3514图片预览
型号: CHA3514
PDF下载: 下载PDF文件 查看货源
内容描述: 6-18GHz 4位数字可变增益放大器 [6-18GHz 4 bit Digital Variable Amplifier]
分类和应用: 放大器
文件页数/大小: 10 页 / 352 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA3514
RoHS COMPLIANT
6-18GHz 4 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3514 is composed by a two stage
travelling wave amplifier followed by a four
steps digital attenuator. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Performances: 6-18GHz
19dBm saturated output power
13 dB gain
4bit attenuator for 39.5dB dynamic range
DC power consumption, 190mA @ 4.5V
Chip size:
5.54 x 2.30 x 0.1mm
Typical on wafer Measurements
Gain versus attenuation states
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
Psat
ATT dyn
Parameter
Operating frequency range
Small signal gain @ Attenuator state 0dB
Saturated Output power @ Attenuator state 0dB
Attenuator range with 4bit
Min
6
Typ
13
19
39.5
Max
18
Unit
GHz
dB
dBm
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA3514-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09