CHA3513
RoHS COMPLIANT
6-18GHz 3 bit Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3513 is composed by a three steps
digital attenuator followed by a three stage
travelling amplifier and a Single Pole Single
Through (SPST) switch. It is designed for
defense applications. The backside of the
chip is both RF and DC grounded. This helps
to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
0dB state
10A
5A
10A1
B C F
G
RF
RF
IN
10dB
5dB
10dB
OUT
10B
5B
10B1
A D E
H
Typical on wafer Measurements
Gain versus attenuation states
Main Features
5dB state
■
Performances: 6-18GHz
■
20dBm saturated output power
■
19 dB gain
■
3 bit attenuator for 26dB range
■
DC power consumption, 300mA @ 4.5V
■
Chip size:
6.68 x 2.46 x 0.1 mm
10dB state
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
Psat
ATT dyn
Parameter
Operating frequency range
Small signal gain @ Attenuator state 0dB
Saturated Output power @ Attenuator state 0dB
Attenuator range with 3bit
Min
6
Typ
19
20
25
Max
18
Unit
GHz
dB
dBm
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA3513-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
