CHA3511
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°
C
Vd (Pads D & B)= 4.5V, Vg (Pads A & C) tuned for Id= 190mA
Configuration Gain:E2=-5V; F=0V
Configuration isolation: E2=0V; F=-5V
Symbol
Fop
G
ISO
P1dB
Psat
Parameter
Operating frequency range (1)
Small signal gain @ Config Gain
Delta Gain between config Gain & config.
Isolation
Output power at 1dB compression @ Config.
Gain
Saturated Output power @ config. gain
Noise figure @ Config. Gain
Min
6
Typ
Max
18
Unit
GHz
dB
dB
dBm
dBm
16
35
18
20
39
20
22
NF
6-12 GHz
12-18 GHz
6
8
2.3:1
2.0:1
4.5
190
-5/0
8
10
dB
dB
VSWRin
VSWRout
Vd
Id
Vc
Input VSWR @Config gain
Output VSWR @Config. gain
Drain bias DC voltage (Pads D,B)
Bias current @ small signal
Control voltage for Attenuator bits
V
250
mA
V
Ref. : DSCHA35116286 - 13 Oct 06
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
