CHA3092RBF
20-30GHz Medium Power Amplifier
Schematic
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Vd
Vg1,2,3,4
Idd
Pin No.
7
1&2
7
Drain bias voltage
First & second stages gate bias voltage
Drain current
Parameter
Values
3.5
-0.2
300
Unit
V
V
mA
All other pins are not used for this device.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Ta
Tstg
(1)
(2)
(3)
(4)
Parameter
Drain bias voltage_small signal (2)
Drain bias current_small signal
Gate bias voltage
Negative Drain Gate voltage (= Vds – Vgs)
Maximum continuous input power (2)
Maximum peak input power overdrive (3)
Operating temperature range (4)
Storage temperature range
Values
4.0
400
-2 to +0.4
+5
+4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
V
dBm
dBm
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
3.5V recommended for up to a max of 3dB gain compression.
Duration < 1s.
Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA3092RBF2057 -26-Feb.-01-
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
