71-76GHz Medium Power Amplifier
CHA3080-98F
Recommended assembly plan
To VG Power supply
10nF
10nF
10nF
To VD Power supply
To VD Power supply
120pF
120pF
120pF
120pF
75µm Ribbon
75µm Ribbon
(length ~ 330µm)
(length ~ 330µm)
160µm Gap
[chip to chip)
≥10KΩ
≥ 10KΩ
120pF
120pF
120pF
120pF
120pF
120pF
10nF
To VG
10nF
10nF
10nF
10nF
Power supply
To VD Power supply
To VD Power supply
To VG Power supply
The design of the circuit integrates a half ribbon (75µm wide) connection at the input and the
output of the MMIC amplifier compliant with a 50 Ohm line on GaAs MMIC.
The circuits have to be as close as possible to each other; the ribbon length must be as short
as possible: typically 160µm gap between two chips is considered, and the loop height must
also be the smallest possible (80µm).
Ribbon (W75µm, length≈330µm )
µwave
µwave
access
access
MMIC
MPA
160µm
105µm
A second solution is to use wires (Ø 25µm). In this case a minimum of two wires together
with the same chip to chip distance mention above are necessary to reduce the inductance
effect. Nevertheless, simulations show an improvement of RF performance for E-band
frequency range with the use of ribbon connection instead of wire.
For DC connection (DC pads), a 25µm bonding is preferred.
Due to BCB coating on the chip, qualification domain requires the chip to be glued.
Ref. : DSCHA30803245 - 02 Sep 13
11/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
