CHA3063
Electrical Characteristics on wafer
5.5-23GHz Driver Amplifier
Tamb = +25°
Vd1=Vd2=4V Vg tuned for Id=160mA (around –0.27V)
C,
Symbol
Fop
G
Parameter
Operating frequency range
Small signal gain (5.5-6GHz)
Small signal gain (6-23GHz)
Min
5.5
17
18
Typ
Max
23
Unit
GHz
dB
19
±1.0
35
dB
dB
dB
dBm
dBm
dBm
-7
-7
6
210
dB
dB
dB
mA
∆G
Is
P1dB
Pout
OIP3
RL_IN
RL_OUT
NF
Small signal gain flatness
Reverse isolation
CW output power at 1dB compression (1)
Output Power (Pin=0dBm)
Output 3rd order intercept point (2)
Input Return Loss (3)
Output Return Loss (3)
Noise figure
+16
+18
+18
+20
28
-15
-15
4.5
160
Id_
small signal
Bias current
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement
(3) RL_IN, RL_OUT < 6dB from 5.5GHz to 7GHz
Absolute Maximum Ratings
(1)
Tamb. = 25°
C
Symbol
Vds
Ids
Vg
Ig
Vgd
Pin
Ta
Tstg
Parameter
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Gate bias current
Maximum negative gate drain Voltage (Vg-Vd)
Maximum continuous input power
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
5.0
210
-2 to +0.4
0.7
-5
+1
+15
-40 to +85
-55 to +125
Unit
V
mA
V
mA
V
dBm
dBm
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref : DSCHA3063-8144 - 23 May 08
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
