CHA3063
5.5-23GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3063 is a two-stage general
purpose
monolithic
medium
power
amplifier.The backside of the chip is both RF
and DC grounds.This helps simplify the
assembly process.
The circuit is manufactured with a PM-
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
24
20
16
Gain Rlosses & NF ( dB )
12
8
NF
dBS21
Main Feature
§
§
§
§
Broad band performance 5.5-23GHz
21dBm output power (Psat)
19dB gain,
±
1dB gain flatness
PAE:11%@P-1dB typical
Chip size : 1.33 x 0.910x 0.1mm
4
0
-4
-8
dBS11
dBS22
§
-12
-16
-20
-24
2
4
6
8
10
12
14
16
18
20
22
24
Frequency ( GHz )
On wafer typical measurements
Main Characteristics
Tamb = +25°C
Symbol
Fop
G
Pout
Parameter
Operating frequency range
Small signal gain
Output power, Pin=0dBm
Min
5.5
18
+18
19
+20
160
210
Typ
Max
23
Unit
GHz
dB
dBm
mA
Id_small_signal Bias current
ESD Protection : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA30632263 -20-Sept.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09