CHA2494-98F
34-44GHz Low Noise Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +4V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
Linear Gain
34
44
GHz
Gain
NF
20
3.0
-8
dB
dB
Noise Figure
RLlin
RLout
OIP3
OP1dB
Vg
Input Return Loss
Output Return Loss
Output 3rd order intercept point
Output Power @1dB comp.
Gate voltage
dB
-8
dB
20
dBm
dBm
V
12
-0.45
80
Id
Drain current
mA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.3 to 0.4nH will improve the matching at the accesses.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
Drain bias current
Gate bias voltage
4.5V
V
Id
160
mA
V
Vg
-2 to +0.4
Tj
Junction temperature
175
°C
°C
Ta
Operating temperature range
-40 to +85
Tstg
Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Parameter
Values
4
Unit
V
DC drain voltage
Id
DC drain current controlled with Vg
DC gate voltage
80
mA
V
Vg
-0.45
Ref. : DSCHA24941144 - 24 May 11
2/12
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
