34-44GHz Low Noise Amplifier
CHA2494-98F
Notes
Due to ESD protection circuits on RF input and output, an external capacitance might be
requested to isolate the product from external voltage that could be present on the RF
accesses.
Vg
RFin
RFout
Vd
ESD protections is also implemented on gate access common to 3rd and 4th stage (1st and 2nd
stage are self-biased).
Due to BCB coating on the chip, qualification domain implies the chip must be glued.
Biasing conditions:
Vg could be tuned to reach 120mA in order to increase the output power and the gain (see
pages 5 & 6).
The current has no influence on Noise figure.
Ref. : DSCHA24941144 - 24 May 11
11/12
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
