K-band LNA
CHA2411-QDG
Electrical Characteristics
Full temperature range
Symbol/Pins
Frequency range
Small signal Gain
Gain variation over frequency
Gain variation over temperature
SSB Noise figure
Input / Output Return Loss (20 to 23GHz)
Input Power at 1 dB Gain Compression @24GHz
Input IP3 @24GHz
Saturated Output Power @24GHz
+Vd, +Vg
+I
Top
Supply Voltage
Supply Current
Operating temperature range
-40
Parameters
Min
20
22
26
±
0.5
±
2
2.5
15
-14
-7.5
13.5
5
43
25
55
100
15
Typ
Max
25
30
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
V
mA
°C
Remark :
These performance has been obtained with the chip in QFN package mounted on the recommended
boards (ref. 95541 & 95581) described in the document. These performance are highly dependent on
this environment.
Absolute Maximum Ratings
(1)
Symbol
+Vg, +Vd
+I
Pin
Top
Tstg
Parameters
Maximum positive supply voltage
Maximum positive supply voltage
Maximum peak input power overdrive
Operating temperature range (2)
Storage temperature range
Values
6
65
-5
-40 to +100
-55 to +125
Unit
V
mA
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s
(2) Temperature of the back side of the QFN. Thermal resistance is RTh=195°C/W
Ref. : DSCHA2411QDG6174 - 23 Jun 06
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
