CHA2395
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2395 is a four-stage monolithic low
noise amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Vd
Vd
In
Out
Vg 1,2
Vg 3,4
Typical on wafer measurements :
Main Features
■
Broadband performances
■
3.0dB Noise Figure
■
30dB gain
■
±1.0dB
gain flatness
■
Low DC power consumption,
90mA@3.5V
■
Chip size : 2.07 X 1.11 X 0.10 mm
35
30
6
5
Gain (dB)
20
15
10
5
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
3
2
1
0
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Noise figure
Min
36
25
8
Typ
Max
40
Unit
GHz
dB
dBm
30
10
3.0
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA23952240 -28-Aug.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF (dB)
25
4
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
