CHA2395
Electrical Characteristics
Tamb = +25°C, Vd= 3.5V
Symbol
Fop
G
∆G
∆Gsb
Is
P1dB
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
36-40GHz Low Noise Amplifier
Min
36
25
Typ
Max
40
Unit
GHz
dB
dB
30
±1.5
0.5
Gain ripple over 40MHz ( within -30 ; +75°C )
Reverse isolation (1)
Output power at 1dB gain compression
35
8
40
10
2.5:1
2.5:1
3.0
Vd
Vg
3.5
-2
90
dBpp
dB
dBm
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
NF
Vdc
Noise figure (2)
DC Voltage
3.0:1
3.0:1
4.0
4
+0.4
dB
V
V
mA
Id
Bias current (2)
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 90 mA is the typical bias current used for on wafer measurements, with adjusting Vg1,2
voltage for optimum noise figure and Vg3,4 adjusting for maximum gain.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Vg
Vdg
Id
Pin
Ta
Tstg
(1)
(2)
Parameter
Drain bias voltage
Gate bias voltage
Maximum drain to gate voltage (Vd - Vg)
Drain bias current
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
4.5
-2.0 to +0.4
+5.0
200
+15
-40 to +85
-55 to +125
Unit
V
V
V
mA
dBm
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
Duration < 1s.
2/6
Specifications subject to change without notice
Ref. : DSCHA23952240 -28-Aug.-02
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
