CHA2394
Electrical Characteristics
Tamb = +25° Vd1,2,3 = 3.5V
C,
Symbol
Fop
G
∆G
∆Gsb
Is
P1dB
VSWRin
36-40GHz Very Low Noise Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Gain flatness over 40MHz ( within -30 ; +75° )
C
Reverse isolation (1)
Output power at 1dB gain compression
Input VSWR (1)
Min
36
18
Typ
Max
40
Unit
GHz
dB
dB
dBpp
21
±1.5
0.5
25
5
30
8
2.5:1
2.5:1
2.5
3.0:1
3.0:1
3.0
4
+0.4
dB
dBm
VSWRout Output VSWR (1)
NF
Vd
Noise figure (2)
DC Voltage
Vd
Vg
dB
V
V
mA
-2
3.5
-0.25
60
Id
Bias current (2)
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings
(1)
Tamb. = 25°
C
Symbol
Vd
Id
Vdg
Vg
Pin
Pin
Ta
Tstg
Drain bias current
Maximum drain to gate voltage (Vd - Vg)
Gate bias voltage
Maximum peak input power overdrive (2)
Maximum continuous input power
Operating temperature range
Storage temperature range
Parameter
Drain bias voltage
Values
5.0
150
+5.0
-2.0 to +0.4
+15
-5
-40 to +85
-55 to +125
Unit
V
mA
V
V
dBm
dBm
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA23946354 - 20 Dec 06
2/8
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
