CHA2394
36-40GHz Very Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2394 is a three-stage monolithic
low noise amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
IN
OUT
Vds
Vds
Vgs1&2
Vgs3
Main Features
■
Broadband performances : 36-40GHz
22
20
Gain (dB)
18
16
14
12
10
Typical on wafer measurements :
4
3,5
NF (dB)
3
2,5
2
1,5
1
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
■
2.5dB Noise Figure
■
21dB gain
■
±1.5dB
gain flatness
■
Low DC power consumption, 60mA @
3.5V
■
Chip size : 1.72 X 1.08 X 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Noise figure
Min
36
18
8
21
12
2.5
3.0
Typ
Max
40
Unit
GHz
dB
dBm
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA23942240 -28-Aug.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09