CHA2391
36-40GHz Very Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2391 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
IN
50
25
Vd
OUT
Vg 1
Vg 2
Main Features
■
Broad band performance 36-40GHz
■
2.5dB noise figure, 36-40GHz
■
15dB gain,
±
0.5dB gain flatness
■
Low DC power consumption, 50mA
■
20dBm 3rd order intercept point
■
Chip size : 1,67 x 1,03 x 0.1mm
Gain (dB)
20
16
12
8
4
0
30
31
32
33
34
35
36
37
38
39
40
Frequency (GHz)
5
4
3
2
1
0
On wafer typical measurements.
.
Main Characteristics
Tamb = +25°C
Symbol
Fop
NF
G
P1dB
Parameter
Operating frequency range
Noise figure, 36-40GHz
Gain
Output power at 1dB gain compression
12
Min
36
2.5
15
9
Typ
Max
40
3
Unit
GHz
dB
dB
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA23912240 -28-Aug.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
NF (dB)