CHA2391
Electrical Characteristics
Tamb = +25°C,
Bias Conditions:Vd = +4V
Symbol
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Vd
36-40GHz Very Low Noise Amplifier
Parameter
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1)
Input VSWR (1)
Ouput VSWR (1)
3rd order intercept point
Output power at 1dB gain compression
DC Voltage
Vd
Vg
Min
36
12
Typ
Max
40
Unit
Ghz
dB
15
±
0.5
2.5
±
1.0
3
3.0:1
3.0:1
20
12
4
-0.25
45
4.5
+0.4
dB
dB
dBm
dBm
V
-2
Id
Drain bias current (2)
mA
(1
) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the
indicated parameters should be improved
.
(2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2.
For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the
Vg1,2 voltage.
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Vg
Vdg
Pin
Pin
Top
Tsg
Parameter
Drain bias voltage
Gate bias voltage
Maximum drain to gate voltage (Vd-Vg)
Maximum peak input power overdrive (2)
Maximum continuous input power
Operating temperature range
Storage temperature range
Values
5.0
-2.0 to +0.4
+5.0
+15
+1
-40 to +85
-55 to +125
Unit
V
V
V
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA23912240 -28-Aug.-02
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
