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CHA2295_07 参数 Datasheet PDF下载

CHA2295_07图片预览
型号: CHA2295_07
PDF下载: 下载PDF文件 查看货源
内容描述: 6-11GHz缓冲放大器,分配器 [6-11GHz Buffer Splitter Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 6 页 / 189 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2295
6-11GHz Buffer Splitter Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2295 is a broadband buffer splitter
three-stage monolithic amplifier.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounds. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
20
19
18
17
Main Features
Broadband performance: 6-11GHz
14dBm saturated output power.
18dB
±1.5dB
gain flatness
Good broadband matching
Low DC power consumption: 160mA @ 3.5V
Chip size:
2.26 X 1.33 X 0.10 mm
16
15
14
13
12
11
10
1
2
3
4
5
6
7
8 9 10 11 12 13 14 15 16 17 18
Frequency (GHz)
Gain channel 1
Gain channel 2
Typical on wafer measurements : Gain (dB)
Main Characteristics
Tamb=25°
C
Symbol
Fop
G
Psat
Parameter
Operating frequency range
Small signal gain
Saturated Output power
Min
6
15
12
Typ
18
14
160
Max
11
Unit
GHz
dB
dBm
Id_small signal Bias current
220
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22957262 - 19 Sep 07
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09