CHA2295
6-11GHz Buffer Splitter Amplifier
Chip Assembly and Mechanical Data
RF Out 1
To Vd DC Drain supply feed
120pF
RF In
120pF
RF Out 2
To Vg DC Gate supply feed
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended.
Bonding pad positions.
( Chip thickness : 100µm. DC pads : 100*100 µm². All dimensions are in micrometers )
Ordering Information
Chip form
:
CHA2295-99F/00
Information furnished is believed to be accurate and reliable. However
United Monolithic Semiconductors
S.A.S.
assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of
United Monolithic Semiconductors S.A.S..
Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
United Monolithic Semiconductors S.A.S.
products are not authorised for use
as critical components in life support devices or systems without express written approval from
United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA22957262 - 19 Sep 07
6/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
