CHA2294
RoHS COMPLIANT
35-40GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2294 is a high gain
four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
26
24
22
20
18
16
14
12
10
8
6
4
2
0
35
36
Main Features
Frequency range: 35-40GHz
4.0dB Noise Figure.
22dB gain
Gain control range: 15dB
Low DC power consumption, 120mA @ 5V
Chip size: 2.32 X 1.235 X 0.10 mm
Gain (dB)
NF (dB)
37
38
Frequency (GHz)
39
40
Typical on wafer measurements :Gain & NF
Main Characteristics
Tamb. =25°
C
Symbol
Fop
G
NF
Gctrl
Id
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
10
Parameter
Operating frequency range
Min
35
20
Typ
22
4
15
120
Max
40
Unit
GHz
dB
4.5
dB
dB
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precaution
Ref. : DSCHA22947165 - 14 Jun 07
1/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
