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CHA2292-99F/00 参数 Datasheet PDF下载

CHA2292-99F/00图片预览
型号: CHA2292-99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 17-24GHz低噪声,可变增益放大器 [17-24GHz Low Noise, Variable Gain Amplifier]
分类和应用: 放大器
文件页数/大小: 6 页 / 139 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2292
17-24GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2292 is a high gain
four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps simplify the assembly
process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
V5
Vd2,3,4
Vg1
Vg2,3,4
Vc
Typical on wafer measurements :Gain & NF
Main Features
Frequency range : 17-24GHz
2.8dB Noise Figure.
25dB gain
Gain control range: 15dB
DC power consumption: 160mA @ 5V
Chip size : 2.32 X 1.23 X 0.10 mm
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Gain (dB)
NF (dB)
16
17
18
19
20
21
22
23
24
Main Characteristics
Tamb. = 25°C
Parameter
Min
Frequency (GHz)
Typ
Max
Unit
Fop
G
NF
Gctrl
Id
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
17
25
2.8
15
160
24
GHz
dB
dB
dB
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22922108 - 18-Apr.-02
1/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09