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CHA2291 参数 Datasheet PDF下载

CHA2291图片预览
型号: CHA2291
PDF下载: 下载PDF文件 查看货源
内容描述: 10-18GHz低噪声,可变增益放大器 [10-18GHz Low Noise, Variable Gain Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 413 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2291
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2291 is a high gain
four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems.The backside of the chip is both RF and
DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Frequency range: 10-18GHz
2.2dB Noise Figure.
23dB gain
Gain control range: 25dB
DC power consumption: 180mA @ 5V
Chip size: 2.49 X 1.23 X 0.10 mm
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
Gain (dB)
NF (dB)
11
12
13
14
Frequency (GHz)
15
16
17
18
Typical on wafer measurements : Gain & NF
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
NF
Gctrl
Id
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
Parameter
Operating frequency range
Min
10
20
Typ
23
2.2
25
180
Max
18
Unit
GHz
dB
3
dB
dB
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA22917165 - 14 Jun 07
1/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09