10-18GHz LNA VGA
Electrical Characteristics for Broadband Operation
Tamb = +25°C, V5=Vd2,3,4= 5V
Symbol
Fop
G
∆G
Is
NF
Gctrl
P1dB
VSWRin
VSWRout
Vd
CHA2291
Parameter
Operating frequency range
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure with Vc=1.2V (1)
Gain control range versus Vc
Output power at 1dB compression with Vc=1.2V
Input VSWR (1)
Output VSWR (1)
DC voltage
V5= Vd2,3,4
Vc
Min
10
Typ
Max
18
Unit
GHz
dB
dB
dB
dB
dB
dBm
23
±1
60
2.2
20
10
3.0:1
2.5:1
5
[-0.7, +1.2]
25
180
-1.5
+1.3
V
V
mA
mA
Id1
Id
Bias current (2) with Vc=1.2V
Bias current total (3) with Vc=1.2V
(1) These values are representative of on-wafer measurements that are made without bonding
wires at RF ports.
(2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with Vg1 voltage.
(3) With Id1=25mA, adjust Vg2,3,4 voltage for a total drain current around 180mA.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Vc
Vdg
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum Control bias voltage
Maximum drain to gate voltage (Vd - Vg)
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
+5.25
250
-2.5 to +0.4
+1.5
+5.0
+15
+175
-40 to +85
-55 to +125
Unit
V
mA
V
V
V
dBm
°C
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22912149 - 29-May-02
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
