CHA2290
RoHS COMPLIANT
10-18GHz Low Noise, Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2290 is a high gain
four-stage
monolithic low noise amplifier with variable gain.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
V5
VD1
VD234
VG1 VG2 VG34 VC
Typical on wafer measurements : Gain & NF
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
10
1
2
Main Features
•
•
•
•
•
•
Frequency range : 10 -18GHz
2.2dB Noise Figure.
25dB gain
Gain control range: 25dB
DC power consumption: 180mA @ 5V
Chip size : 2.49 X 1.23 X 0.10 mm
Gain
(dB)
NF
(dB)
1
4
1
6
1
8
20
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Parameter
Fop
G
NF
Gctrl
Id
Operating frequency range
Small signal gain
Noise figure
Gain control range with Vc variation
Bias current
Min
10
Typ
Max
18
Unit
GHz
dB
dB
dB
mA
25
2.2
20
180
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22906193 - 11 jul 06
1/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
