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CHA2266-99F/00 参数 Datasheet PDF下载

CHA2266-99F/00图片预览
型号: CHA2266-99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 12.5-17GHz低噪声驱动放大器 [12.5-17GHz Low-Noise Driver Amplifier]
分类和应用: 放大器驱动
文件页数/大小: 7 页 / 127 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2266
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
VD 1
The CHA2266 is a self biased, low-noise high
gain driver amplifier. It is designed mainly for
VSAT applications in Ku-band. The backside of
the chip is both RF and DC grounded. This
helps to simplify the assembly process.
The circuit is manufactured on a standard GaAs
PHEMT process, with via holes through the
substrate, air bridges and electron beam gate
lithography.
VD 2
IN
OUT
Main Features
40
Typical on wafer measurements
Typical CHA2266
( Vds = 4V, Ids = 130mA )
35
Broad band performance 12.5–17GHz
2.5dB noise figure
34dB gain, +/- 0.5dB gain flatness
Low DC power consumption:130mA
Saturated output power : 16dBm
Chip size 2.32 x 1.02 x 0.1mm
30
25
Gain & Returnloss / dB
20
15
10
5
0
-5
-10
-15
-20
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
4.1
2.9
2.5
2.0
1.9
1.6
1.5
1.5
2.2
MS11
MS21
MS22
NF
Frequency / GHz
Absolute maximum Ratings
(1)
Symbol
Vd
Pin
Top
Tstg
Parameter (1)
Drain bias voltage
Maximum continious input power overdrive
Operating temperature range
Storage temperature
Values
4.3
-15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above any of these parameters may cause permanent damage.
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22662242 - 30-Aug.-02
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09