CHA2194
36-44GHz Low Noise Amplifier
Self biased
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased wide
band monolithic low noise amplifier,
designed for 36GHz to 44GHz point to point
and point to multipoint communication
.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
22
24
26
28
30
32
34
36
38
40
42
25,00
Main Feature
§
§
§
§
§
Broad band performance 36-44GHz
3dB noise figure
19dB gain,
±
0.5dB gain flatness
Low DC power consumption, 45mA
20dBm 3rd order intercept point
Chip size : 1.670 x 0.970x 0.1mm
Gain & NF ( dB )
15,00
5,00
-5,00
§
-15,00
dBS21
NF
dBS11
dBS22
-25,00
44
46
48
50
52
54
56
58
60
Frequency ( GHz )
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure at freq : 40GHz
Gain
Gain flatness
On wafer typical measurement
Min
Typ
3
Max
4
Unit
dB
dB
17
19
±
0.5
±
1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref : DSCHA21942035 -04-Feb.-02
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
RLosses(dB)