CHA2192
Tamb = +25°C, Vd = 3.5V
Symbol
Fop
G
∆G
Is
NF
P1dB
VSWRin
24-26.5GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure
Pulsed output power at 1dB compression (1)
Input VSWR (1)
8
Min
24
14
Typ
Max
26.5
Unit
GHz
dB
dB
dB
15
±1.0
30
1.8
10
2.0:1
2.0:1
40
60
2.0
dB
dBm
VSWRout Output VSWR (1)
Id
Bias current
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
4.0
150
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21928155
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
