CHA2190
20-30GHz Low Noise Amplifier
self biased
GaAs Monolithic Microwave IC
Description
The circuit is a two-stages self biased wide
band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
18
14
10
Main Feature
dBSij & NF ( dB )
§
§
§
§
§
§
Broad band performance 20-30GHz
2.2dB noise figure
15dB gain,
±
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1.670 x 1.03x 0.1mm
6
2
-2
-6
-10
-14
-18
-22
-26
14
16
18
20
22
24
26
28
30
32
34
36
dBS11
dBS21
dBS22
NF
Frequency ( GHz )
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure at freq : 40GHz
Gain
Gain flatness
On wafer typical measurement
Min
Typ
2.2
Max
3
Unit
dB
dB
13
15
±
.0.5
±
1
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref :
DSCHA21902036 -05-Feb.-02-
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
