CHA2157
Tamb = +25°C, Vd = 3.3V
Symbol
Fop
G
∆G
Is
NF
P1dB
VSWRin
55-60GHz Low Noise Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Noise figure
CW output power at 1dB compression (1)
Input VSWR (1)
13
20
Min
55
8
Typ
Max
60
Unit
GHz
dB
dB
dB
10
±1.0
25
3.5
15
3.0:1
3.0:1
3.3
80
12
±2.0
4.5
dB
dBm
6.0:1
6.0:1
3.8
150
V
mA
VSWRout Output VSWR (1)
Vd
Id
DC Voltage
Bias current
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Parameter
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
4.0
150
-2.0 to +0.4
TBD
-40 to +85
-55 to +155
Unit
V
mA
V
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21579090
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
