CHA2157
Typical on Wafer Measurements
55-60GHz Low Noise Amplifier
Bias conditions: Tamb=+25° Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA
C,
15
10
15
Gain
Gain & Rloss (dB)
10
5
0
-5
-10
Gain & Rloss (dB)
5
0
-5
-10
-15
-20
0
10
20
30
40
50
60
Gain
S11
S11
S22
-15
-20
55
56
57
58
59
60
S22
Frequency (GHz)
Frequency (GHz)
Typical packaged Measurements
Bias conditions: Tamb=+25° Vd=3.3V, Vg1=Vg2 to ha ve Id=80mA
C,
15
10
0
-5
-10
-15
-20
50
52
54
56
58
60
S11
S22
Gain & NF (dB)
5
Gain
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
50
52
54
Gain
Gain & Rloss (dB)
NF
56
58
60
Frequency (GHz)
Frequency (GHz)
Ref. : DSCHA21577150 - 30 May 07
4/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
