CHA2157
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2157 is a two stages low noise and
medium power amplifier. It is designed for a
wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Gain & Rloss (dB)
Main Features
3.5 dB noise figure
10 dB
±
1dB gain
15 dBm output power (-1dB gain comp.)
DC power consumption, 80mA @ 3.3V
Chip size : 1.71 x 1.04 x 0.10 mm
15
10
5
0
-5
-10
-15
-20
55
56
Gain
S11
S22
57
58
59
60
Frequency (GHz)
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
NF
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min
55
8
Typ
Max
60
Unit
GHz
dB
dB
dBm
10
3.5
12
4.5
13
15
80
150
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21579090
Specifications subject to change without notice
1/6
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
