CHA2094b
Electrical Characteristics
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Fop
G
∆G
∆Gsb
Is
P1dB
VSWRin
36-40GHz Low Noise Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Gain flatness over 40MHz ( within -30 ; +75°C )
Reverse isolation (1)
Output power at 1dB gain compression
Input VSWR (1)
Min
36
18
Typ
Max
40
Unit
GHz
dB
dB
dBpp
21
±1.5
0.5
25
5
30
8
2.5:1
2.5:1
3.0
3.0:1
3.0:1
4.0
4
+0.4
100
dB
dBm
VSWRout Output VSWR (1)
NF
Vd
Noise figure (2)
DC Voltage
Vd
Vg
dB
V
V
mA
-2
3.5
-0.25
60
Id
Bias current (2)
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For
optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2
voltage.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Parameter
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
5.0
150
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20949312 – 08-Nov.-99
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
