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CHA2098RBF 参数 Datasheet PDF下载

CHA2098RBF图片预览
型号: CHA2098RBF
PDF下载: 下载PDF文件 查看货源
内容描述: 20-33GHz高增益缓冲放大器 [20-33GHz High Gain Buffer Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 6 页 / 165 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2098RBF
Schematic
20-33GHz High Gain Buffer Amplifier
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Vd
Vg1
Vg2, Vg3
Id
Pin No.
6
1
2
6
Drain bias voltage
Gate bias voltage (1st stage)
Gate bias voltage (2nd and 3rd stage)
Drain current
Parameter
Values
3.5
-0.1
-0.1
150
Unit
V
V
V
mA
All other pins are not used for this device.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Operating temperature range (2)
Storage temperature range
Parameter
Values
4.0
200
-2.0 to +0.4
-40 to +85
-55 to +155
Unit
V
mA
V
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA2098RBF2057 -26-Feb.-02
2/6
Specifications subject to change without notice
"
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09