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CHA2098RBF/24 参数 Datasheet PDF下载

CHA2098RBF/24图片预览
型号: CHA2098RBF/24
PDF下载: 下载PDF文件 查看货源
内容描述: 20-33GHz高增益缓冲放大器 [20-33GHz High Gain Buffer Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 6 页 / 165 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2098RBF
20-33GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a high gain broadband three-
stage monolithic buffer amplifier. It is
designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
PM-HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
Broadband performance: 20-40GHz
Small signal gain 18dB (typical)
SMD leadless package
Pout-1dB : +15dBm (typical).
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN
Ref. : DSCHA2098RBF2057 -26-Feb.-02
1/6
Specifications subject to change without notice
1."
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09