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CHA2098B 参数 Datasheet PDF下载

CHA2098B图片预览
型号: CHA2098B
PDF下载: 下载PDF文件 查看货源
内容描述: 20-40GHz高增益缓冲放大器 [20-40GHz High Gain Buffer Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 8 页 / 108 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2098b
20-40GHz High Gain Buffer Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2098b is a high gain broadband three-
stage monolithic buffer amplifier. It is designed
for a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a P-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
25
Vd1
Vd2,3
IN
OUT
Vg1
Vg2
Vg3
Typical on-wafer results :
Main Features
Broadband performances : 20-40GHz
16dBm output power ( 1dB gain comp. )
19dB
±1.5dB
gain
Low DC power consumption, 150mA @ 3.5V
Chip size : 1.67 X 0.97 X 0.10 mm
15
5
-5
-15
-25
10
15
20
25
30
35
40
45
Frequency ( GHz )
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Small signal gain
Output power at 1dB gain compression
Bias current
Parameter
Operating frequency range
Min
20
17
13
Typ
19
16
150
Max
40
Unit
GHz
dB
dBm
200
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20981233 21- August-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09