CHA2098b
Tamb = +25°C, Vd1,2,3 = 3.5V
Symbol
Fop
G
∆G
Is
P1db
P03
VSWRin
20-40GHz High Gain Buffer Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Output power at 1dB gain compression (1)
Output power at 3dB gain compression
Input VSWR (1)
13
15
Min
20
17
Typ
Max
40
Unit
GHz
dB
dB
dB
dBm
dBm
19
±1.5
30
16
16
3.0:1
3.0:1
10.0
150
200
VSWRout Output VSWR (1)
NF
Id
Noise figure
Bias current
dB
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Operating temperature range
Storage temperature range
Parameter
Values
4.0
200
-2.0 to +0.4
-40 to +85
-55 to +155
Unit
V
mA
V
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA20981233 21-August-01
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
