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CHA2097A99F/00 参数 Datasheet PDF下载

CHA2097A99F/00图片预览
型号: CHA2097A99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 20-40GHz可变增益放大器 [20-40GHz Variable Gain Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 123 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2097a
20-40GHz Variable Gain Amplifier
GaAs Monolithic Microwave IC
Description
Vd1
Vd23
The CHA2097a is a variable gain broadband
three-stage monolithic amplifier. It is designed
for a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
In
Out
Vctrl
Vg1
Vg2
Vg3
Typical on wafer measurements
Main Features
Broadband performances : 20-40GHz
14dBm output power ( 1dB gain comp. )
18dB
±1.5dB
gain
10dB gain control range.
Low DC power consumption, 140mA @ 3.5V
Chip size : 2.04 X 0.97 X 0.10 mm
25
20
15
10
5
0
-5
-10
-15
-20
-25
0
10
20
30
Gain & Rloss (dB)
S22
S11
40
50
60
frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Gctrl
P1dB
Id
Small signal gain
Gain control range
Output power at 1dB gain compression
Bias current
13
Parameter
Operating frequency range
Min
20
16
Typ
18
10
14
140
Max
40
Unit
GHz
dB
dB
dBm
200
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20978021
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09