CHA2092b
Electrical Characteristics
Tamb = +25°C, Vds = 3.5V; Ids=60mA
Symbol
Fop
G
∆G
∆Gsb
Is
P1dB
VSWRin
18-32GHz Low Noise Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Gain flatness over 40MHz
Reverse isolation (1)
Output power at 1dB gain compression (3)
Input VSWR (1)
Min
20
18
Typ
Max
28
Min
18
17
Typ
Max
32
Unit
GHz
dB
dB
22
±1.5
0.5
22
±2.5
0.5
dBpp
dB
dBm
25
8
30
10
2.5:1
2.5:1
3.0:1
3.0:1
3.5
4.5
25
8
30
10
2.5:1
2.5:1
2.5
2.5
2.5
3.5
-0.5
60
3.5:1
3.5:1
4
3.5
3.5
4.5
VSWRout Output VSWR (1)
NF
Vd
Noise figure (2)
DC Voltage
18-20GHz
20-28GHz
28-32GHz
Vd
Vgs1,Vgs2&3
Id
Bias current (2)
2.5
3.5
-0.5
60
dB
V
V
mA
100
100
(1)These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
(2) 60 mA is the typical bias current used for on wafer measurements, with Vgs1 and Vgs2&3
connected together. For optimum noise figure, the bias current could be reduced down to
50 mA, adjusting the Vgs1 voltage.
(3) Ids=90mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
5.0
120
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA20921233 21-August-01
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
