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CHA2091 参数 Datasheet PDF下载

CHA2091图片预览
型号: CHA2091
PDF下载: 下载PDF文件 查看货源
内容描述: 36-40GHz低噪声放大器 [36-40GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 118 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2091
36-40GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2091 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
IN
50
25
Vd
OUT
Vg 1
Vg 2
Gain ( dB )
16
14
12
10
8
6
4
2
0
20
25
30
35
40
45
50
Frequency ( GHz )
8
7
6
5
4
3
2
1
0
Broad band performance 36-40GHz
3.0dB noise figure, 36-40GHz
14dB gain,
±
0.5dB gain flatness
Low DC power consumption, 50mA
20dBm 3rd order intercept point
Chip size : 1,67 x 1,03 x 0.1mm
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure, 36-40GHz
Gain
Gain flatness
12
Min
Typ
3.0
14
±
0.5
±
1.0
Max
4.0
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20919340 -06 Dec. 99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure ( dB )
Main Features
20
18
10
9