CHA2090
17-24GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2090 is a three-stage self-biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
30
25
12
10
8
6
4
2
0
5
7
9 11 13 15 17 19 21 23 25 27 29 31 33 35
Frequency ( GHz )
Main Features
§
§
§
§
§
Broadband performance 17-24GHz
2.0dB noise figure
23dB gain,
±
1dB gain flatness
Low DC power consumption, 55mA
Chip size : 2,170 x 1,270x 0.1mm
20
15
10
5
0
On wafer typical measurements
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Fop
NF
G
VSWRin
VSWRout
Parameter
Operating frequency range
Noise figure
Gain
Input VSWR
Output VSWR
19
Min
17
2.0
23
2:1
2:1
Typ
Max
24
3.0
Unit
GHz
dB
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20909347 – 13 Dec. 99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
