CHA2069
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is a three-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
24
22
20
18
16
14
12
10
8
6
4
2
0
14
16
18
20
22
24
26
28
30
32
34
Main Features
Broad band performance 18-31GHz
2.5dB noise figure
22dB gain,
±
1dB gain flatness
Low DC power consumption, 55mA
20dBm 3rd order intercept point
Chip size : 2,170 x 1,270x 0.1mm
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure,18-31GHz
Gain
Gain flatness
18
Min
Typ
2.5
22
±
1
±
1.5
Max
3.5
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. :DSCHA20699273 - 8-Sep-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
