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CHA2069RAF 参数 Datasheet PDF下载

CHA2069RAF图片预览
型号: CHA2069RAF
PDF下载: 下载PDF文件 查看货源
内容描述: 18-31GHz低噪声放大器 [18-31GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 7 页 / 174 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2069RAF
Schematic
18-31GHz Low Noise Amplifier
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Vdd
Idd
Pin No.
6
6
Drain bias voltage
Drain current
Parameter
Values
4.5
55
Unit
V
mA
All other pins are not used for this device.
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Pin
Top
Tstg
Parameter
Drain bias voltage
Maximum peak input power overdrive (2)
Operating temperature range (3)
Storage temperature range
Values
5.0
+15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA2069RAF2169 -18-June-02-
2/7
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09