CHA2069-QDG
RoHS COMPLIANT
18-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA2069-QDG is a three-stage self-
biased wide band monolithic low noise
amplifier. Typical applications range from
telecommunication (point to point, point to multi-
point, VSAT) to ISM and military markets.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via holes
through the substrate, air bridges and electron
beam gate lithography.
It is supplied in lead-free SMD package.
Gain and NF @ high current config. (BCF grounded)
Main Features
■
Broadband performance 18-30GHz
■
3dB noise figure
■
20dB gain
■
65 mA Low DC power consumption.
■
20dBm 3
rd
order intercept point (high current
configuration).
■
24L-QFN4x4 SMD package
Gain & NF (dB)
24
22
20
18
16
14
12
10
8
6
4
2
0
10
12
Gain
NF
14
16
18
20
22
24
26
28
30
32
Frequency (GHz)
Main Characteristics
Tamb = +25° Vd = +4,5V Pads: VgB, VgC, VgF=GND (H igh current configuration)
C,
Symbol
NF
G
IP3
Parameter
Noise figure, 18-26GHz
Gain
3rd order intercept point (Pout/tone=-5dBm)
18-26 GHz
18
20
dBm
17
Min
Typ
3
20
Max
4
Unit
dB
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA2069QDG6332 - 28 Nov 06
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
