欢迎访问ic37.com |
会员登录 免费注册
发布采购

CHA2066_04 参数 Datasheet PDF下载

CHA2066_04图片预览
型号: CHA2066_04
PDF下载: 下载PDF文件 查看货源
内容描述: 10-16GHz低噪声放大器 [10-16GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 117 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
 浏览型号CHA2066_04的Datasheet PDF文件第2页浏览型号CHA2066_04的Datasheet PDF文件第3页浏览型号CHA2066_04的Datasheet PDF文件第4页浏览型号CHA2066_04的Datasheet PDF文件第5页浏览型号CHA2066_04的Datasheet PDF文件第6页浏览型号CHA2066_04的Datasheet PDF文件第7页浏览型号CHA2066_04的Datasheet PDF文件第8页  
CHA2066
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
A
B
C
D
E
NC
G1
7272
NC
G2
Vd
RFin
RFout
UMS
Gain ( dB )
18
16
14
12
10
8
6
4
2
0
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
0
1
2
3
4
¦
Broad band performance 10-16GHz
¦
2.0dB noise figure, 10-16GHz
¦
16dB gain,
±
0.5dB gain flatness
¦
Low DC power consumption, 50mA
¦
20dBm 3rd order intercept point
¦
Chip size : 1,52 x 1,08 x 0.1mm
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure, 10-16GHz
Gain
Gain flatness
14
Min
Typ
2.0
16
±
0.5
±
1.0
Max
2.5
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20664281 - 07 Oct 04
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure ( dB )
Main Features
20
5