CHA2066
Electrical Characteristics
Tamb = +25°C, Vd = +4V
Symbol
Parameter
10-16GHz Low Noise Amplifier
Test
Condi
tions
Min
Typ
Max
Unit
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Operating frequency range
Gain (1)
Gain flatness (1)
Noise figure (1)
Input VSWR (1)
Ouput VSWR (1)
3rd order intercept point
Output power at 1dB gain
compression
Drain bias current (2)
10
14
16
±
0.5
2.0
16
Ghz
dB
±
1.0
2.5
3.0:1
3.0:1
dB
dB
20
10
45
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires at
the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated
parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing ( B & D grounded ).
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
Vd
Pin
Top
Tstg
Parameter (1)
Drain bias voltage (3)
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
4.5
+15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit :
B & D grounded
. See chip biasing option page 7/8.
Ref. : DSCHA20664281 - 07 Oct 04
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
