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CHA2066RBF 参数 Datasheet PDF下载

CHA2066RBF图片预览
型号: CHA2066RBF
PDF下载: 下载PDF文件 查看货源
内容描述: 10-16GHz自偏置低噪声放大器 [10-16GHz Self biased Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 184 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2066RBF
10-16GHz Self biased Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a two-stage self biased wide
band monolithic low noise amplifier.
The MMIC is manufactured with a standard
PM-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
Broad band performance: 10-16GHz
Gain = 15dB (typical)
Noise Figure 2.0dB (typical)
Output power (P
-1dB
) 13dBm (typical)
Return loss < -6dB
SMD leadless package
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package
(i.e.
side
with
metallic
pads)
is
just
for
fabrication
purposes
and
does
NOT
indicate
the
location
of
PIN
1."
Ref. : DSCHA2066RBF2317 -13-Nov.-02
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09