10-16GHz Low Noise Amplifier
Tamb = +25° Vd = +4V
C,
Symbol
Fop
G
∆G
NF
VSWRin
VSWRout
IP3
P1dB
Id
Parameter
Operating frequency range
Gain
Gain flatness
Noise figure
Input VSWR
Ouput VSWR (11 to 16 GHz)
3rd order intercept point
Output power at 1dB gain compression
Drain bias current
20
13
Min
10
14
CHA2066-QAG
Electrical Characteristics (BE: High current biasing)
Typ
Max
16
Unit
Ghz
dB
16
±
1.5
3.0
2.0 :1
1.5:1
21
14
70
80
±
2.0
3.5
3.0:1
2.0:1
dB
dB
dBm
dBm
mA
These values are representative of onboard measurements based on the propose characterization
board.
Ref. : DSCHA2066QAG6332 - 28 Nov 06
3/12
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
