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UM61512ASW-20 参数 Datasheet PDF下载

UM61512ASW-20图片预览
型号: UM61512ASW-20
PDF下载: 下载PDF文件 查看货源
内容描述: 64K ×8位高速CMOS SRAM [64K X 8 BIT HIGH SPEED CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 165 K
品牌: UMC [ UMC CORPORATION ]
 浏览型号UM61512ASW-20的Datasheet PDF文件第1页浏览型号UM61512ASW-20的Datasheet PDF文件第2页浏览型号UM61512ASW-20的Datasheet PDF文件第4页浏览型号UM61512ASW-20的Datasheet PDF文件第5页浏览型号UM61512ASW-20的Datasheet PDF文件第6页浏览型号UM61512ASW-20的Datasheet PDF文件第7页浏览型号UM61512ASW-20的Datasheet PDF文件第8页浏览型号UM61512ASW-20的Datasheet PDF文件第9页  
UM61512A  
Recommended DC Operating Conditions(TA = 0°C to + 70°C)  
Symbol  
VCC  
GND  
VIH  
Parameter  
Supply Voltage  
Ground  
Min.  
4.75  
0
Typ.  
Max.  
Unit  
V
5.0  
0
5.25  
0
V
Input High Voltage  
Input Low Voltage  
Output Load  
2.2  
-0.3  
-
3.5  
0
VCC + 0.3  
V
VIL  
+0.8  
30  
1
V
CL  
-
pF  
-
TTL  
Output Load  
-
-
Absolute Maximum Ratings*  
*Comments  
VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V  
IN, IN/OUT Volt to GND . . . . . . . . . -0.5V to VCC +0.5V  
Operating Temperature, Topr . . . . . . . . . . 0 °C to +70°C  
Storage Temperature, Tstg . . . . . . . . . . -55 °C to +125°C  
Temperature Under Bias, Tbias . . . . . . . -10 °C to +85°C  
Power Dissipation, Pt . . . . . . . . . . . . . . . . . . . . . . 1.0W  
Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec  
Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to this device.  
These are stress ratings only. Functional operation of  
this device at these or any other conditions above  
those indicated in the operational sections of this  
specification is not implied or intended. Exposure to  
the absolute maximum rating conditions for extended  
periods may affect device reliability.  
DC Electrical Characteristics (TA = 0°C to + 70°C, VCC = 5V ± 5%, GND = 0V)  
Symbol  
Parameter  
UM61512A-15/20/25  
Unit  
Conditions  
Min.  
Max.  
Input Leakage Current  
Output Leakage Current  
-
-
2
2
VIN = GND to VCC  
½ILI½  
mA  
mA  
½ILO½  
CE1 = VIH or CE2 = VIL or  
OE = VIH or WE = VIL  
VI/O = GND to VCC  
ICC1 (1)  
Dynamic Operating Current  
-
160  
mA  
CE1 = VIL, CE2 = VIH  
II/O = 0 mA  
ISB  
-
-
30  
20  
mA  
mA  
CE1 = VIH or CE2 = VIL  
ISB1  
CE1 ³ VCC - 0.2V,  
CE2 ³ VCC - 0.2V,  
VIN £ 0.2V or VIN ³ VCC - 0.2V  
Standby Power  
Supply Current  
ISB2  
-
20  
mA  
CE1 £ 0.2V, CE2 £ 0.2V  
VIN £ 0.2V or VIN ³ VCC - 0.2V  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
-
0.4  
-
V
V
IOL = 8 mA  
IOH = -4 mA  
2.4  
Note: 1. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.  
3